The researchers experimented with a new key in of technology known as resistive switching memory.
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The various changes in electrical resistance create different possible states to storedata.
Thats because the material has no structure at the atomic level.
Hellenbrand and his co-scientists, however, found a solution: throwing barium into the mix.
These materials can work like a synapse in the brain.
When barium was added, it formed highly-structured barium bridges between thick films of hafnium oxide.
Story byIoanna Lykiardopoulou
Ioanna is a writer at TNW.
With a background in the humanities, she has a soft spot for social impact-enabling technologies.
